PART |
Description |
Maker |
H57V2622GMR-60X H57V2622GMR-75X |
256Mb : x32 Dual Die Synchronous DRAM
|
Hynix Semiconductor http://
|
K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H |
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H560838J |
256Mb J-die DDR SDRAM Specification
|
Samsung semiconductor
|
K4H561638H-UI/PB0 K4H561638H-UI/PB3 K4H561638H-UI/ |
256Mb H-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4H560838E-NLB3 K4H560438E-NC K4H560438E-NC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
SAMSUNG[Samsung semiconductor]
|
K4H560838H |
(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
|
Samsung semiconductor
|
K4S643232H K4S643232H-TC_L60 K4S643232H-TC60 K4S64 |
2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 64Mb H-die (x32) SDRAM Specification 64芯片(X32号)内存规格
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
K4H560838F-UC/LA2 K4H561638F-UC/LA2 K4H560838F-UC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
|
Samsung Semiconductor Co., Ltd.
|
K4S560432E-NC75 K4S560832E-NC75 K4S560832E-NL75 K4 |
256Mb E-die SDRAM Specification 54pin sTSOP-II 256Mb的电子芯片内存规4pin sTSOP -
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/ |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP(二 DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP(二 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
PUMA2U8002I-25 PUMA2U8002I-20 PUMA2U8002M-15 PUMA2 |
DIE SALE, 1.8V,11MIL(SERIAL EE) x32 EPROM Module 10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE) 8-TSSOP, PB/HALO FREE,NiPdAu, 1.8V(SERIAL EE) 8 TSSOP, PB/HALO FREE, IND TEMP, 1.8V(SERIAL EE) X32号存储器模块 8-SAP,PB/HALO FREE,IND TEMP,2.7V(SERIAL EE) X32号存储器模块
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NXP Semiconductors N.V. Amphenol, Corp.
|